Light emitting diode package structure and method for fabricating the same

ABSTRACT

A light emitting diode (LED) package structure includes a carrier, a first protrusion, a LED chip, and an adhesion layer. The first protrusion is disposed on the carrier and has a first opening to expose the carrier. The LED chip is disposed in the first opening on the carrier, and a ratio between a width of the first opening and a width of the LED chip is 1˜1.5. The adhesion layer is disposed between the LED chip and the carrier to bond the LED chip to the carrier.

CROSS-REFERENCE TO RELATED APPLICATION

This is a continuation-in-part application of and claims the prioritybenefit of patent application Ser. No. 12/126,935, filed on May 26,2008, which claims the priority benefit of Chinese application SerialNo. 200810083769.9, filed on Mar. 12, 2008. The entirety of each of theabove-mentioned patent applications is hereby incorporated by referenceherein and made a part of this specification.

TECHNICAL FIELD

The present invention relates to a light emitting diode packagestructure, and particularly relates to a light emitting diode packagestructure having high thermal conduction efficiency.

BACKGROUND

In recent years, luminescence efficiency of light emitting diodes (LED)has been constantly improved. Consequently, fluorescent lamps andincandescent bulbs are gradually replaced with LEDs in some fields, suchas scanning light source which requires high speed response, back orfront light source of a liquid crystal display (LCD), automobiledashboard illumination, traffic signs, and general illumination devices.Typical LEDs are usually semiconductor devices which use III-Vcompounds, such as GaP, GaAs, and so on. LEDs convert electrical energyinto light. When an electric current is applied to a semiconductordevice with the aforesaid compounds, energy is released in the form oflight through the combination of electron and electron hole. LEDs haveadvantages, such as faster response (about 10⁻⁹ S), smaller size, lowerpower consumption, less pollution, higher reliability, and capabilityfor mass production. Accordingly, LEDs are widely applied in manyfields.

FIG. 1 is a schematic cross-sectional view depicting a conventionallight emitting diode package structure. Referring to FIG. 1, aconventional light emitting diode package structure 100 consists of aLED chip 110, a carrier 120, a conductive line 132, a conductive line134, and a molding compound 140. Herein, the LED chip 110 is disposed onthe carrier 120, and the conductive line 132 and the conductive line 134electrically connect the LED chip 110 with the carrier 120 respectively.The molding compound 140 is disposed on the carrier 120 and covers theconductive line 132 and the conductive line 134. The LED chip 110 isapplied voltage difference through the conductive line 132 and theconductive line 134, and thereby a light emitting layer 112 of the LEDchip 110 emits light and generates heat.

It is noted that the carrier 120 and the molding compound 140 of theconventional light emitting diode package structure 100 have poorthermal conduction efficiency. Consequently, heat generated by the lightemitting layer 112 of the LED chip 110 can not be released effectively.When a high electric current is applied, the LED chip 110 is easilydamaged for being overheated. Hence, a conventional method, which uses athermal conductive material, such as metal, to fabricate the carrier120, is provided to improve the thermal conduction efficiency of abottom 114 of the light emitting diode package structure 100. However,such a method does not improve the thermal conduction efficiency of asidewall 116 of the LED chip 110.

SUMMARY

In one embodiment, a light emitting diode (LED) package structurecomprises a carrier, a first protrusion, a LED chip, and an adhesionlayer. Herein, the first protrusion is disposed on the carrier and has afirst opening to expose the carrier. The LED chip is disposed in thefirst opening on the carrier, and a ratio between a width of the firstopening and a width of the LED chip is 1 approximately, such that aninner sidewall of the first opening is attached to a sidewall of the LEDchip. The adhesion layer is disposed between the LED chip and thecarrier to bond the LED chip to the carrier.

In another embodiment, a light emitting diode (LED) package structurecomprises a carrier, a first protrusion, a LED chip, and an adhesionlayer. Herein, the first protrusion is disposed on the carrier and has afirst opening to expose the carrier. The LED chip is disposed in thefirst opening on the carrier, and a ratio between a width of the firstopening and a width of the LED chip is larger than 1 and smaller than orequal to 1.5 such that a gap exists between a sidewall of the LED chipand an inner sidewall of the first opening. The adhesion layer isdisposed between the LED chip and the carrier to bond the LED chip tothe carrier.

In another embodiment, a method for fabricating a light emitting diodepackage structure described as follows. First, a substrate having afirst surface is provided. Then, an adhesion layer and a LED chip aredisposed on the first surface of the substrate, wherein the adhesionlayer is bonded between the LED chip and the substrate, and the LED chipcomprises a second surface away from the substrate. Next, a firstthermal-conductive material layer is formed on the first surface,wherein the first thermal-conductive material layer comprises a firstopening to expose the LED chip, and an inner sidewall of the firstopening is attached to a sidewall of the LED chip.

In another embodiment, a method for fabricating a light emitting diodepackage structure described as follows. A substrate having a recess isprovided. Then, an adhesion layer and a LED chip are disposed on abottom of the recess, and the adhesion layer is bonded between thesubstrate and the LED chip. A ratio between a width of the recess and awidth of the LED chip is larger than 1 and smaller than or equal to 1.5,and therefore a gap exists between a sidewall of the LED chip and aninner sidewall of the recess.

In another embodiment, a method for fabricating a light emitting diode(LED) package structure, comprising providing a temporary substrate andan adhesive layer disposed thereon wherein a material of the adhesivelayer is a removable material; disposing a plurality of LED chips on thetemporary substrate wherein the LED chips are partially embedded in theadhesive layer respectively; forming a film on the adhesive layerwherein the film covers the LED chips fully; singulating the temporarysubstrate and the adhesive layer into a plurality of LED chip units andeach LED chip unit has a LED chip, a first film, a first adhesive layerand a first temporary substrate; disposing the LED chip unit on asubstrate reversely wherein the first film is between the LED chip andthe substrate and an adhesive layer is disposed between the first filmand the substrate; forming a first protrusion formed by a thermalconductive material on the substrate wherein the first protrusion has afirst opening to expose the LED chip and a ratio between a width of thefirst opening and a width of the LED chip being larger than 1 andsmaller than or equal to 1.5; and removing the first adhesive layer andthe first temporary substrate so as to expose the LED chip.

In another embodiment, a light emitting diode (LED) package structurecomprises a carrier, a LED chip, a thermal conductive layer, a film andan adhesive layer. The carrier has a recess and the LED chip disposed inthe recess. The thermal conductive layer is disposed on the carrier andin the recess wherein the portion of the thermal conductive layer in therecess is between the LED chip and the carrier and the thermalconductive layer has an opening and the LED chip is disposed therein anda ratio between a first width of the opening and a second width of theLED chip being larger than 1 and smaller than or equal to 1.5. The filmis disposed on a sidewall and a bottom of the LED chip and the adhesivelayer is disposed between the LED chip and the carrier.

In another embodiment, a light emitting diode (LED) package structurecomprises: a carrier; a pedestal disposed on the carrier and having afirst recess wherein a bottom of the first recess has an openingexposing the carrier; a thermal conductive layer disposed in the firstrecess and has a second recess having an inside wall including a tiltwall, a vertical wall and a horizontal wall wherein the vertical wallconnects the tilt wall to the horizontal wall; a LED chip disposed inthe second recess and on the horizontal wall wherein a ratio between aminimum width of the second recess and a second width of the LED chipbeing larger than 1 and smaller than or equal to 1.5; a film disposed onthe inside wall; and an adhesive layer disposed in the opening andbetween the thermal conductive layer and the carrier.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the invention, and are incorporated in and constitute apart of this specification. The drawings illustrate embodiments of theinvention and, together with the description, serve to explain theprinciples of the invention.

To make the above purposes, features, and advantages of the presentinvention more comprehensible, preferable embodiments accompanied bydrawings are detailed as follows.

FIG. 1 is a schematic cross-sectional view depicting a conventionallight emitting diode package structure.

FIG. 2 is a schematic cross-sectional view depicting a light emittingdiode package structure according to an embodiment.

FIGS. 3˜8 are schematic cross-sectional views depicting a variety of thelight emitting diode package structure in FIG. 2.

FIG. 9 is a schematic cross-sectional view depicting a light emittingdiode package structure according to an embodiment.

FIG. 10 is a schematic cross-sectional view depicting a light emittingdiode package structure according to another embodiment.

FIG. 11 is a schematic cross-sectional view depicting a light emittingdiode package structure according to yet another embodiment.

FIG. 12 is a schematic cross-sectional view depicting a variety of thelight emitting diode package structure in FIG. 11.

FIGS. 13A˜13D are schematic cross-sectional views depicting a processflow for fabricating a light emitting diode package structure accordingto an embodiment.

FIGS. 14A˜14C are schematic cross-sectional views depicting a processflow for fabricating a light emitting diode package structure accordingto another embodiment.

FIGS. 15A˜15C are schematic cross-sectional views depicting a processflow for fabricating a light emitting diode package structure accordingto an embodiment.

FIG. 16 is schematic cross-sectional views depicting a light emittingdiode package structure according to an embodiment.

FIG. 17 and FIG. 18 are two variations of the light emitting diodepackage structure in FIG. 16.

FIGS. 19A˜19D are schematic cross-sectional views depicting a processflow for fabricating a light emitting diode package structure accordingto an embodiment.

FIG. 20 is a schematic cross-sectional view depicting a LED packagestructure according to an embodiment.

FIGS. 21A˜21C are schematic cross-sectional views depicting a processflow for fabricating a light emitting diode package structure accordingto another embodiment.

FIGS. 22A˜22C are schematic cross-sectional views depicting a processflow for fabricating a light emitting diode package structure accordingto another embodiment.

FIGS. 23A˜23G are schematic cross-sectional views depicting a processflow for fabricating a light emitting diode package structure accordingto another embodiment.

FIG. 24 is schematic cross-sectional view depicting a variationstructure of FIG. 23A and FIG. 25 is schematic cross-sectional viewdepicting a variation structure of FIG. 23B.

FIG. 26 is a schematic cross-sectional view depicting a light emittingdiode package structure according to an embodiment.

FIG. 27 is a schematic cross-sectional view depicting a light emittingdiode package structure according to an embodiment.

FIG. 28 is a schematic cross-sectional view depicting a light emittingdiode package structure according to an embodiment.

FIG. 29A is a schematic cross-sectional view depicting a LED packagestructure according to an embodiment and FIG. 29B is a schematic topview depicting the LED chip in FIG. 29A.

FIG. 30A is a schematic cross-sectional view depicting a LED packagestructure according to an embodiment and FIG. 30B is a schematic topview depicting the LED chip in FIG. 30A.

FIGS. 31A˜31G are schematic cross-sectional views depicting a processflow for fabricating a light emitting diode chip structure according toone embodiment.

FIG. 32 is schematic cross-sectional views depicting a light emittingdiode chip structure according to an embodiment.

FIGS. 33A˜33B are schematic cross-sectional views depicting a processflow for fabricating a light emitting diode chip structure according toanother embodiment.

DESCRIPTION OF EMBODIMENTS

FIG. 2 is a schematic cross-sectional view depicting a light emittingdiode package structure according to an embodiment. Referring to FIG. 2,in this embodiment, a light emitting diode package structure 200comprises a carrier 210, a first protrusion 220, a LED chip 230, and anadhesion layer 240. Herein, the first protrusion 220 is disposed on thecarrier 210 and has a first opening 222 to expose the carrier 210. Thefirst protrusion 220 may comprise a thermal-conductive material layer.In addition, a material of the thermal-conductive material layer maycomprise gold, silver, copper, indium, titanium, zinc, aluminum, lead,tin, nickel, platinum, chromium, or a combination of alloys thereof.Certainly, in other embodiments, the first protrusion may comprise astack of a plurality of thermal-conductive material layers. In addition,a material of the stack of thermal-conductive material layers maycomprise gold, silver, copper, indium, titanium, zinc, aluminum, lead,tin, nickel, platinum, chromium, or a combination of alloys thereof.Furthermore, the carrier 210 may comprise a substrate 212, a firstconductive structure 214, and a second conductive structure 216. Thefirst conductive structure 214 and the second conductive structure 216respectively pass through the substrate 212.

The LED chip 230 is disposed in the first opening 222 on the carrier210. A ratio between a width W2 of the first opening 222 and a width W1of the LED chip 230 is 1, and therefore an inner sidewall 222 a of thefirst opening 222 is attached to a sidewall 232 of the LED chip 230. Inthis embodiment, the width W1 (the widest portion) of the LED chip 230and the width W2 of the first opening 222 are referred in the samecross-section.

It is noted that the present invention is not intended to limit therelative heights of the first protrusion 220 and the LED chip 230. It isto say that a height H1 of the LED chip 230 may be larger than, smallerthan, or equal to a height H2 of the first protrusion 220. In addition,the first conductive structure 214 and the second conductive structure216 are electrically connected with the LED chip 230 respectively. Theadhesion layer 240 is bonded between the LED chip 230 and the carrier210 to bond the LED chip 230 to the carrier 210. A material of theadhesion layer 240 is, for example, silver paste, solder, glass, alloy,or other suitable thermal conductive materials. Hence, the adhesionlayer 240 helps to improve the thermal conduction efficiency of the LEDchip 230.

In view of the above, the light emitting diode package structure 200 inthis embodiment comprises the first protrusion 220 formed by a thermalconductive material, and the first protrusion 220 is attached to thesidewall 232 of the LED chip 230. Moreover, compared with a conventionalcarrier 120 (referring to FIG. 1), the first protrusion 220 is closer toa light emitting layer (not shown) of the LED chip 230. Consequently,the first protrusion 220 in this embodiment helps to increase thethermal conduction efficiency of the sidewall 232 of the LED chip 230,and release the heat generated by the light emitting layer of the LEDchip 230. Therefore, the first protrusion 220 in this embodiment helpsthe light emitting diode package structure 200 to prevent reducing lightemitting efficiency or damaging the LED chip 230.

The heat generated by the LED chip within the light emitting diodepackage structure in this embodiment is removed through the firstprotrusion attached to the sidewall of the LED chip so as to enhance thethermal conduction efficiency of the light emitting diode packagestructure. Persons skilled in this art may make some modificationswithout departing from the spirit and scope of the present invention. Inaddition, a variety of the light emitting diode package structure 200 isdescribed as follows.

In the present embodiments, an insulating substrate, a leadframe, or acarrier substrate may serve as a substrate 212 depending onrequirements. In this embodiment, the substrate 212 is the insulatingsubstrate. A material of the insulating substrate is, for example,ceramic. However, this embodiment is not limited thereto. The insulatingsubstrate may also be formed by other suitable insulating materials.

FIGS. 3˜8 are schematic cross-sectional views depicting a variety of thelight emitting diode package structure in FIG. 2. Referring to FIG. 3,in this embodiment, a light emitting diode package structure 300 issimilar to the light emitting diode package structure 200, and thedifference lies in that the light emitting diode package structure 300and the light emitting diode package structure 200 comprise differentcarriers 210. The carrier 210 of the light emitting diode packagestructure 300 may comprise the substrate 212, a first conductivestructure 214, a second conductive structure 216. The LED chip 230 isdisposed on the substrate 212, and the first conductive structure 214and the second conductive structure 216 are respectively disposed on thesubstrate 212 on two sides of the LED chip 230.

In this embodiment, the substrate 212 is, for example, asilicon-on-insulator (SOI). For instance, the substrate 212 comprises afirst semiconductor layer S1, a second semiconductor layer S2, aninsulating strip I1, and an insulating layer 12 arranged between thefirst semiconductor layer S1 and the second semiconductor layer S2. Theinsulating strip I1 is disposed in the second semiconductor layer S2 todivide the second semiconductor layer S2 into a first portion A and asecond portion B. The first portion A is electrically connected with thefirst conductive structure 214, and the second portion B is electricallyconnected with the second conductive structure 216. Herein, a materialof the first semiconductor layer S1 and the second semiconductor layerS2 is silicon, for example. A material of the insulating strip I1 andthe insulating layer 12 is, for example, silicon oxide (SiO₂). Inaddition, the first conductive structure 214 and the second conductivestructure 216 are electrically connected with the LED chip 230respectively through a first conductive line C1 and a second conductiveline C2. Referring to FIG. 4, in other embodiments, the adhesion layer240 may comprise a first conductive bump B1 and a second conductive bumpB2, and the first conductive structure 214 and the second conductivestructure 216 are electrically connected with the LED chip 230respectively through the first conductive bump B1 and the secondconductive bump B2.

Referring to FIG. 5, in this embodiment, a light emitting diode packagestructure 400 is similar to the light emitting diode package structure200, and the difference lies in that the light emitting diode packagestructure 400 and the light emitting diode package structure 200comprise different carriers 210. In this embodiment, the substrate 212of the carrier 210 comprises a recess 212 a, and the LED chip 230 isdisposed in the recess 212 a on the substrate 212. Moreover, the lightemitting diode package structure 200 further comprises a fluorescentmaterial layer 250 disposed in the recess 212 a to cover the LED chip230.

Referring to FIG. 6, in this embodiment, a light emitting diode packagestructure 500 is similar to the light emitting diode package structure400, and the difference lies in that the light emitting diode packagestructure 500 and the light emitting diode package structure 400comprise different carriers 210. In this embodiment, the carrier 210further comprises a housing 218, and the first conductive structure 214and the second conductive structure 216 respectively pass through thehousing 218.

In this embodiment, the substrate 212 is formed by a conductivematerial, and the housing 218 is formed by an insulating material. Theconductive material is, for example, copper, aluminum, or other suitableconductive materials. The LED chip 230 is electrically connected withthe substrate 212 through the adhesion layer 240, and the substrate 212is electrically connected with the second conductive structure 216through the second conductive line C2. In addition, the LED chip 230 iselectrically connected with the first conductive structure 214 throughthe first conductive line C1. Furthermore, the light emitting diodepackage structure 500 may comprise an optical lens 260 disposed on therecess 212 a.

Referring to FIG. 7, in other embodiments, a carrier of a light emittingdiode package structure 600 is, for example, a first leadframe 612having a recess 612 a. The LED chip 230 is disposed in the recess 612 aand electrically connected with the first leadframe 612. In addition,the light emitting diode package structure 600 further comprises asecond leadframe 614, a conductive line C, a molding compound 260, and afluorescent material layer 250. Herein, the LED chip 230 is electricallyconnected with the second leadframe 614 through the conductive line C.The fluorescent material layer 250 is disposed in the recess 612 a tocover the LED chip 230. Furthermore, the molding compound 260 covers theconductive line C.

FIG. 8 is a schematic cross-sectional view depicting a light emittingdiode package structure according to another embodiment of the presentinvention. Referring to FIG. 8, in other embodiments, a light emittingdiode package structure 700 may further comprise a reflective layer Rdisposed on the first protrusion 220 depending on requirements. Thefirst protrusion 220 comprises the first thermal-conductive materiallayer 224 and the second thermal-conductive material layer 226 arrangedbetween the first thermal-conductive material layer 224 and thereflective layer R, wherein the first thermal-conductive material layer224 is disposed on the carrier 210. The reflective layer R is adaptedfor reflecting a light generated by the LED chip 230 so as to increaselight utilization. For instance, a material of the firstthermal-conductive material layer 224 is copper, a material of thesecond thermal-conductive material layer 226 is nickel, and a materialof the reflective layer R is sliver. In addition, this embodiment doesnot limit the number of the thermal-conductive material layers containedin the first protrusion 220. Therefore, the first protrusion 220 maycomprise a thermal-conductive material layer or a plurality ofthermal-conductive material layers.

FIG. 9 is a schematic cross-sectional view depicting a light emittingdiode package structure according to an embodiment of the presentinvention. Referring to FIG. 9, in this embodiment, a light emittingdiode package structure 800 comprises a carrier 810, a first protrusion820, a LED chip 830, and an adhesion layer 840. The first protrusion 820is disposed on the carrier 810 and has a first opening 822 to expose thecarrier 810. The first protrusion 820 is formed by a thermal conductivematerial. The LED chip 830 is disposed in the first opening 822 on thecarrier 810. Moreover, a ratio between a width W2 of the first opening822 and a width W1 of the LED chip 830 is larger than 1 and smaller thanor equal to 1.5. Therefore, a gap A exists between a sidewall 832 of theLED chip 830 and an inner sidewall 822 a of the first opening 822. Theadhesion layer 840 is arranged between the LED chip 830 and the carrier810 to bond the LED chip 830 to the carrier 810.

In this embodiment, the first protrusion 820 and the carrier 810 are,for example, formed in one piece. The first protrusion 820 and thecarrier 810 may be formed by the same material (e.g. a thermalconductive material). Because the first protrusion 820 and the carrier810 are formed in one piece and formed by the same material, heatgenerated by the LED chip 830 is rapidly transferred to the carrier 810through the first protrusion 820. Consequently, the light emitting diodepackage structure 800 has better heat dissipation.

Furthermore, in this embodiment, a portion of the adhesion layer 840 maybe disposed in the gap A depending on requirements. Hence, the adhesionlayer 840 not only bonds the LED chip 830 to the carrier 810 but alsobonds the LED chip 830 to the first protrusion 820. As a consequence,the LED chip 830 and the first protrusion 820 are steadily bonded. Inaddition, the heat generated by the LED chip 830 is transferred to thefirst protrusion 820 through the adhesion layer 840.

Depending on requirements, the light emitting diode package structure800 may further comprise a first optical material layer 850 disposed onthe inner wall 822 a of the first opening 822 and on the carrier 810exposed by the first opening 822. The first optical material layer 850may be a reflective layer or a light absorption layer. If the firstoptical material layer 850 is a reflective layer, the reflective layeris adapted for reflecting a light, which is emitted from the LED chip830 to the inner wall 822 a of the first opening 822 and the carrier 810exposed by the first opening 822, so as to enhance light utilization. Ifthe first optical material layer 850 is a light absorption layer, thelight absorption layer is adapted for absorbing a light, which isemitted from the LED chip 830 to the inner wall 822 a of the firstopening 822 and the carrier 810 exposed by the first opening 822, so asto unify a direction of the light emitted by the light emitting diodepackage structure 800. A variety of the light emitting diode packagestructure 800 is described as follows.

FIG. 10 is a schematic cross-sectional view depicting a light emittingdiode package structure according to another embodiment of the presentinvention. Referring to FIG. 10, a light emitting diode packagestructure 900 may further comprise a first fluorescent material layer860 disposed in the first opening 822 depending on requirements.Moreover, in other embodiments, the light emitting diode packagestructure further comprises a transparent material layer disposed in thefirst opening of the first protrusion.

FIG. 11 is a schematic cross-sectional view depicting a light emittingdiode package structure according to yet another embodiment of thepresent invention. Referring to FIG. 11, a light emitting diode packagestructure 1000 may further comprise a second protrusion 870 disposed onthe first protrusion 820. The second protrusion 870 has a second opening872, and the second opening 872 is connected with the first opening 822.A width W3 of the second opening 872 is larger than a width W2 of thefirst opening 822. In this embodiment, it is noted that the width W2 ofthe first opening 822 and the width W3 of the second opening 872 arereferred in the same cross-section.

In this embodiment, the carrier 810, the first protrusion 820, and thesecond protrusion 870 may be formed in one piece and formed by the samematerial. In addition, the light emitting diode package structure 1000may further comprise a second fluorescent material layer 890 disposed inthe second opening 872. The second fluorescent material layer 890 has auniform thickness, and therefore the light emitting diode packagestructure 1000 emits a light with uniform color.

In this embodiment, the light emitting diode package structure 1000 mayfurther comprise a transparent material layer 880 disposed in the firstopening 822. Herein, the transparent material layer 880 is formed by asuitable transparent material, such as epoxy resin or silicon resin. Thelight emitting diode package structure 1000 may further comprise asecond optical material layer 0 disposed on an inner wall 872 a of thesecond opening 872. The second optical material layer 0 may be areflective layer or a light absorption layer. If the second opticalmaterial layer 0 is a reflective layer, the reflective layer is adaptedfor reflecting a light emitted from the LED chip 830 to the inner wall872 a of the second opening 872, so as to enhance light utilization. Ifthe second optical material layer 0 is a light absorption layer, thelight absorption layer is adapted for absorbing a light emitted from theLED chip 830 to the inner wall 872 a of the second opening 872, so as tounify a direction of the light emitted by the light emitting diodepackage structure 1000.

FIG. 12 is a schematic cross-sectional view depicting a variety of thelight emitting diode package structure in FIG. 11. Referring to FIG. 12,a light emitting diode package structure 1100 in this embodiment issimilar to the light emitting diode package structure 1000 in FIG. 11.The difference lies in that the carrier 810 in this embodiment comprisesthe substrate 812, the first conductive structure 814, and the secondconductive structure 816. Furthermore, the first conductive structure814 and the second conductive structure 816 respectively pass throughthe substrate 812 and the first protrusion 820. In this embodiment, thesubstrate 812 and the first protrusion 820 are formed by an insulatingmaterial. The LED chip 830 is electrically connected with the firstconductive structure 814 and the second conductive structure 816respectively through the first conductive line C1 and the secondconductive line C2.

FIGS. 13A˜13D are schematic cross-sectional views depicting a processflow for fabricating a light emitting diode package structure accordingto an embodiment of the present invention. First, referring to FIG. 13A,a substrate 1310 having a first surface 1312 is provided. In themeantime, a surface treatment process may be performed on the firstsurface 1312 of the substrate 1310. The surface treatment process is,for example, adapted for forming a first thermal-conductive materiallayer on the first surface 1312 or increasing adhesion between the firstthermal-conductive material layer and the substrate 1310.

Then, referring to FIG. 13B, an adhesion layer 1320 and a LED chip 1330are disposed on the first surface 1312 of the substrate 1310. Herein,the adhesion layer 1320 is bonded between the LED chip 1330 and thesubstrate 1310, and the LED chip 1330 has a second surface 1332 awayfrom the substrate 1310.

Thereafter, referring to FIG. 13C, a first thermal-conductive materiallayer 1340 is formed on the first surface 1312. The firstthermal-conductive material layer 1340 has a first opening 1342 toexpose the LED chip 1330, and an inner sidewall 1342 a of the firstopening 1342 is attached to a sidewall 1332 of the LED chip 1330.

In this embodiment, a method for forming the first thermal-conductivematerial layer 1340 comprises electroless plating, electroplating,electrophoresis, electrodeposition, or a combination of the above.Moreover, in other embodiments not illustrated here, a method forforming the first thermal-conductive material layer further comprisesdisposing a bonding layer and a thermal conductive element on the firstsurface of the substrate, wherein the bonding layer is bonded betweenthe substrate and the thermal conductive element.

In this embodiment, referring to FIG. 13D, a second thermal-conductivematerial layer 1350 is formed on the first thermal-conductive materiallayer 1340 after the first thermal-conductive material layer 1340 isformed. Furthermore, in this embodiment, a reflective layer R may beformed on the second thermal-conductive material layer 1350 after thesecond thermal-conductive material layer 1350 is formed. Herein, amaterial of the first thermal-conductive material layer 1340 is copper,a material of the second thermal-conductive material layer 1350 isnickel, and a material of the reflective layer R is sliver.

FIGS. 14A˜14C are schematic cross-sectional views depicting a processflow for fabricating a light emitting diode package structure accordingto another embodiment of the present invention. The fabricating processflow in this embodiment is similar to the fabricating process flowillustrated in FIGS. 13A˜13D.

Referring to FIG. 14A, the difference lies in that this embodimentfurther comprises forming a shielding layer 1360 on the second surface1332 and on a portion of the sidewall 1334 of the LED chip 1330, beforeforming the first thermal-conductive material layer and after disposingthe adhesion layer 1320 and the LED chip 1330 on the first surface 1312of the substrate 1310. Then, referring to FIG. 14B, the firstthermal-conductive material layer 1340 is formed on the first surface1312. Thereafter, referring to FIG. 14C, the shielding layer 1360 isremoved. A recess 1344 is formed in the first thermal-conductivematerial layer 1340 after removing the shielding layer 1360 and afluorescent material layer 1370 is formed in the recess 1344.

FIGS. 15A˜15C are schematic cross-sectional views depicting a processflow for fabricating a light emitting diode package structure accordingto an embodiment of the present invention. First, referring to FIG. 15A,a substrate 1510 having a recess 1512 is provided. In this embodiment,an optical material layer 1520 may also be formed on an inner wall 1512a of the recess 1512. The optical material layer 1520 is, for example, areflective layer, a light absorption layer, or other suitable opticalmaterial layers.

Then, referring to FIG. 15B, the adhesion layer 1530 and the LED chip1540 are disposed on a bottom 1512 b of the recess 1512, and theadhesion layer 1530 is bonded between the substrate 1510 and the LEDchip 1540. A ratio between a width W1 of the recess 1512 and a width W2of the LED chip 1540 is larger than 1 and smaller than or equal to 1.5such that a gap A exists between a sidewall 1542 of the LED chip 1540and the inner wall 1512 a of the recess 1512. Further referring to FIG.15C, in this embodiment, a fluorescent material layer 1550 may be formedin the recess 1512.

FIG. 16 is schematic cross-sectional views depicting a light emittingdiode package structure according to an embodiment. FIG. 17 and FIG. 18are two variations of the light emitting diode package structure in FIG.16. Referring to FIG. 16, in this embodiment, a light emitting diodepackage structure 1600 is similar to the light emitting diode packagestructure 200 in FIG. 2. The difference between the light emitting diodepackage structures 1600 and 200 is that a projection area of an adhesivelayer 1610 of the light emitting diode package structures 1600 to acarrier 1620 is smaller than a projection area of the LED chip 230 tothe carrier 1620 and there is a gap G1 between the LED chip 230 and thecarrier 1620. The first protrusion 1630 has an extending portion 1632filled the gap G1. In this embodiment, the extending portion 1632contacts a bottom 234 of the LED chip 230.

It should be noted that the first protrusion 1630 is conducive toenhancing thermal conduction efficiency of the bottom 234 of the LEDchip 230 besides enhancing thermal conduction efficiency of the sidewall232 of the LED chip 230 because the extending portion 1632 of the firstprotrusion 1630 is filled in the gap G1. Further, the heat generated bythe light emitting layer of the LED chip 230, during light emitting, isremoved more quickly.

Referring to FIG. 17, the carrier 1620 has a pedestal 1624 protrudingfrom a main body 1622 of the carrier 1620 and the LED chip 230 isdisposed on the pedestal 1624 for increasing the distance D between theLED chip 230 and the main body 1622 of the carrier 1620. The width W4 ofthe pedestal 1624 is smaller than the width W1 of LED chip 230 and anadhesive layer 1610 is disposed between the pedestal 1624 and the LEDchip 230.

Referring to FIG. 18, for increasing the contact area between the bottom234 of the LED chip 230 and the extending portion 1632, the pedestal1624 has a first end 1624 a and a second end 1624 b wherein the firstend 1624 a connects the main body 1622 and the second end 1624 b extendstoward the LED chip 230 and the width of the pedestal 1624 is graduallydecreased along a direction from the first end 1624 a to the second end1624 b. The pedestal 1624 has a sidewall 1624 c connecting the first end1624 a and the second end 1624 b wherein the sidewall 1624 c is aninclined plane and the pedestal 1624 is a tapering structure, forexample.

It can be learned from the above that, in this embodiment, the contactarea between the adhesive layer 1610 and LED chip 230 is decreased bydecreasing the area of the second end 1624 b of the pedestal 1624 forincreasing the contact area between the LED chip 230 and the extendingportion 1632, which enhances thermal conduction efficiency of the bottom234 of the LED chip 230.

FIGS. 19A˜19D are schematic cross-sectional views depicting a processflow for fabricating a light emitting diode package structure accordingto an embodiment. FIG. 20 is a schematic cross-sectional view depictinga LED package structure according to an embodiment of the presentinvention. The process of FIGS. 19A˜19D is one of the fabricationmethods of the LED package structure 1600 in FIG. 16. FIG. 29A is aschematic cross-sectional view depicting a LED package structureaccording to an embodiment and FIG. 29B is a schematic top viewdepicting the LED chip in FIG. 29A. FIG. 30A is a schematiccross-sectional view depicting a LED package structure according to anembodiment and FIG. 30B is a schematic top view depicting the LED chipin FIG. 30A.

Firstly, referring to FIG. 19A, a substrate 1910, an adhesive layer 1920and a LED chip 1930 are provided wherein the adhesive layer 1920 isdisposed on the substrate 1910 and connects the LED chip 1930 to thesubstrate 1910. In this embodiment, the projection area of the adhesivelayer 1920 to the substrate 1910 is smaller than the projection area ofthe LED chip 1930 to the substrate 1910 and there is a gap G1 betweenthe LED chip 1930 and the substrate 1910. The substrate 1910 has acenter portion 1912 and a periphery portion 1914 around the centerportion 1912. The material of the center portion 1912 includes copper.The materials of the periphery portion 1914 include insulating materialor plastic material. A metal layer 1970 is optionally disposed on thebottom 1934 and the sidewall 1932 of the LED chip 1930.

Then, referring to FIG. 19B, a shield layer 1940 is formed on the LEDchip 1930 and covers a surface 1932 of the LED chip 1930 facing awayfrom the substrate 1910. After that, referring to FIG. 19C, a firstthermal-conductive material layer 1950 is formed on the substrate 1910.The first thermal-conductive material layer 1950 has a first opening1952 exposing the LED chip 1930 and the insidewall 1952 a of the firstopening 1952 contacts the metal layer 1970. It should be note that, inthis embodiment, the first thermal-conductive material layer 1950 isfilled in the gap G1. This is to say, the first thermal-conductivematerial layer 1950 connects the bottom 1934 of the LED chip 1930. Then,a reflective layer 1960 is formed on the first thermal-conductivematerial layer 1950 optionally. In this embodiment, the firstthermal-conductive material layer 1950 is thinner than the LED chip 1930so as to help the LED chip 1930 emit light from the sidewall 1932.

Referring to FIG. 19D, the shield layer 1940 is removed for exposing theLED chip 1930. Besides, in this embodiment, the first thermal-conductivematerial layer 1950 partially covers the sidewall 1932 of the LED chip1930. Relatively speaking, in other embodiment, referring to FIG. 20,the first thermal-conductive material layer 1950 may optionally coversthe sidewall 1932 of the LED chip 1930 entirely. Referring to FIG. 29Aand FIG. 29B, in another embodiment, a light emitting diode packagestructure 2900 has a plurality of adhesive layers 1920 and some of theadhesive layers 1920 are disposed at the corners of the LED chip 1930and one of the adhesive layers 1920 is disposed at the edge of the LEDchip 1930. Referring to FIG. 30A and FIG. 30B, in another embodiment,all of the adhesive layers 1920 are disposed at four corners of the LEDchip 1930.

FIGS. 21A˜21C are schematic cross-sectional views depicting a processflow for fabricating a light emitting diode package structure accordingto another embodiment.

The fabricating process flow in this embodiment is similar to thefabricating process flow illustrated in FIGS. 14A˜14C. Referring to FIG.21A, the difference lies in that a LED chip 2110 of this embodiment isdifferent from the LED chip 1330 illustrated in FIGS. 14A˜14C whereinthe LED chip 2110 has a surface 2112 facing away from the substrate 1310and the surface 2112 has a trench 2112 a passing through a lightemitting layer 2114 of the LED chip 2110. The trench 2112 a divides thelight emitting layer 2114 into a center part 2114 a and a peripheralpart 2114 b. The center part 2114 a and the peripheral part 2114 b areisolated from each other.

The LED chip 2110 is disposed on a substrate 2120. The substrate 2120 isfixed on a surface 1312 of a substrate 1310 by an adhesive layer 1320disposed therebetween. In this embodiment, the disposition of thesubstrate 2120 is optional. In another words, the LED chip 2110 can bedisposed on the substrate 1310 directly. Then, a shielding layer 1360 isformed on the surface 2112 and filled in the trench 2112 a.

Then, referring to FIG. 21B, a first thermal-conductive material layer1340 is formed on the surface 1312. It should be noted that the centerpart 2114 a and the peripheral part 2114 b are isolated from each otherso the center part 2114 a is isolated from the first thermal-conductivematerial layer 1340 to prevent short-circuit of the center part 2114 aand the first thermal-conductive material layer 1340. Thereafter,referring to FIG. 21C, the shielding layer 1360 is removed. A recess1344 is formed in the first thermal-conductive material layer 1340 afterremoving the shielding layer 1360 and a fluorescent material layer 1370is formed in the recess 1344.

FIGS. 22A˜22C are schematic cross-sectional views depicting a processflow for fabricating a light emitting diode package structure accordingto another embodiment.

The fabricating process flow in this embodiment is similar to thefabricating process flow illustrated in FIGS. 21A˜21C. Referring to FIG.22A, the difference lies in that a LED chip 2210 of this embodiment isdifferent from the LED chip 2120 illustrated in FIGS. 21A˜21C whereinthe LED chip 2210 has a surface 2212 facing away from the substrate 1310and the surface 2212 has a trench 2212 a passing through a lightemitting layer 2214 of the LED chip 2210 and the trench 2212 a islocated on the edge of the LED chip 2210.

The LED chip 2210 is disposed on a substrate 2220. The substrate 2220 isfixed on a surface 1312 of a substrate 1310 by an adhesive layer 1320disposed therebetween. In this embodiment, the disposition of thesubstrate 2220 is optional. In another words, the LED chip 2210 can bedisposed on the substrate 1310 directly. Then, a shielding layer 1360 isformed on the surface 2212 and filled in the trench 2212 a. A film 2230is disposed on the side wall 2216 of the LED chip 2210, the side wall2222 and the bottom 2224 of the substrate 2220 wherein the film 2230 issingle or multi-layered and is an adhesive layer, a mirror layer, abarrier layer or a seed layer.

Then, referring to FIG. 22B, a first thermal-conductive material layer1340 is formed on the surface 1312. It should be noted that theshielding layer 1360 separates the light emitting layer 2214 and thefirst thermal-conductive material layer 1340 to prevent short-circuit ofthe light emitting layer 2214 and the first thermal-conductive materiallayer 1340.

Thereafter, referring to FIG. 22C, the shielding layer 1360 is removed.A recess 1344 is formed in the first thermal-conductive material layer1340 after removing the shielding layer 1360 and a fluorescent materiallayer 1370 is formed in the recess 1344.

FIGS. 23A˜23G are schematic cross-sectional views depicting a processflow for fabricating a light emitting diode package structure accordingto another embodiment. FIG. 24 is schematic cross-sectional viewdepicting a variation structure of FIG. 23A and FIG. 25 is schematiccross-sectional view depicting a variation structure of FIG. 23B.

Referring to FIG. 23A, a temporary substrate 2310 is provided. Anadhesive layer 2320 is formed on the temporary substrate 2310 whereinthe material of the adhesive layer 2320 is a removable material such asa photoresist material. In other embodiment, a plurality of adhesivelayers 2322, 2324 are disposed on the temporary substrate 2310 and theadhesive layers 2322, 2324 stack with each other wherein the adhesivelayers 2322 is, for example, a photoresist layer and the adhesive layers2324 is, for example, an adhesive tape as shown in FIG. 24.

Then, referring to FIG. 23B, a plurality of LED chips 2330 are disposedon the temporary substrate 2310 wherein the LED chips 2330 are partiallyembedded in the adhesive layer 2320, respectively. More particularly,the light emitting layers 2332 of the LED chips 2330 are embedded in theadhesive layer 2320. In other embodiment, an adhesive layer 2340 isformed on the adhesive layer 2320 and exposes the LED chips 2330 whereinthe material of the adhesive layer 2340 is a removable material such asa photoresist material as shown in FIG. 25.

Thereafter, referring to FIG. 23C, a film 2350 is formed on the adhesivelayer 2320 and covers the LED chips 2330 fully. The film 2350 is singleor multi-layered and the film 2350 is an adhesive layer, a mirror layer,a barrier layer or a seed layer.

Next, referring to FIG. 23D, the temporary substrate 2310 and theadhesive layer 2320 are singulated into a plurality of LED chip units2360 and each LED chip unit 2360 has a LED chip 2330, a first film 2352,a first adhesive layer 2326 and a first temporary substrate 2312.

Then, referring to FIG. 23E, the LED chip unit 2360 is disposed on asubstrate 2370 reversely where the first film 2352 is between the LEDchip 2330 and the substrate 2310 and an adhesive layer 2380 is disposedbetween the first film 2352 and the substrate 2370.

Thereafter, referring to FIG. 23F, a first protrusion 2390 formed by athermal conductive material is formed on the substrate 2370 and thefirst protrusion 2390 has a first opening 2392 to expose the LED chip2330 and a ratio between a width W2 of the first opening 2392 and awidth W1 of the LED chip 2330 being larger than 1 and smaller than orequal to 1.5.

Next, referring to FIG. 23G, the first adhesive layer 2326 and the firsttemporary substrate 2312 are removed so as to expose the LED chip 2330.

FIG. 26 is a schematic cross-sectional view depicting a light emittingdiode package structure according to an embodiment.

Referring to FIG. 26, in this embodiment, a light emitting diode packagestructure 2400 comprises a carrier 2410, a thermal conductive layer2420, a LED chip 2430, an adhesion layer 2440, and a film 2450. Thecarrier 2410 has a recess 2412 and the LED chip 2430 is disposedtherein. The thermal conductive layer 2420 is disposed on the carrier2410 and in the recess 2412 wherein the portion of the thermalconductive layer 2420 in the recess 2412 is between the LED chip 2430and the carrier 2410. The thermal conductive layer 2420 has an opening2422 and the LED chip 2430 is disposed therein. A ratio between a widthW2 of the opening 2422 and a width W1 of the LED chip 2430 being largerthan 1 and smaller than or equal to 1.5. The film 2450 is disposed on asidewall 2432 and a bottom 2434 of the LED chip 2430 and the film 2450is single or multi-layered and is an adhesive layer, a mirror layer, abarrier layer or a seed layer. The adhesive layer 2440 is between theLED chip 2430 and the carrier 2410.

FIG. 27 is a schematic cross-sectional view depicting a light emittingdiode package structure according to an embodiment. Referring to FIG.27, in this embodiment, a light emitting diode package structure 2700comprises a carrier 2710, a first protrusion 2720, a LED chip 2730, anadhesion layer 2740 and a film 2750. Herein, the first protrusion 2720is disposed on the carrier 2710 and has a first opening 2722 to exposethe carrier 2710. The first protrusion 2720 may comprise athermal-conductive material layer. The LED chip 2730 is disposed in thefirst opening 2722 and on the first protrusion 2720. An inside wall 2724of the first opening 2722 includes a vertical wall 2724 a, a tilt wall2724 b and a horizontal wall 2724 c wherein the tilt wall 2724 bconnects the vertical wall 2724 a to the horizontal wall 2724 c on whichthe LED chip 2730 is disposed. The adhesion layer 2740 is disposedbetween the LED chip 2730 and the carrier 2710. The film 2750 isdisposed between the LED chip 2730 and the first protrusion 2720 andbetween the LED chip 2730 and the adhesion layer 2740. The film 2750 issingle or multi-layered and is an adhesive layer, a mirror layer, abarrier layer or a seed layer. It should be notice that the tilt wall2724 b benefits the film 2750 to reflect the light emitted from the LEDchip 2730 so as to improve the luminescence efficiency of the lightemitting diode package structure 2700.

FIG. 28 is a schematic cross-sectional view depicting a light emittingdiode package structure according to an embodiment. Referring to FIG.28, in this embodiment, a light emitting diode package structure 2800comprises a carrier 2810, a thermal conductive layer 2820, a LED chip2830, an adhesion layer 2840, a film 2850 and a pedestal 2860. Herein,the pedestal 2860 is disposed on the carrier 2810 and has a recess 2862wherein a bottom 2864 of the recess 2862 has an opening 2864 a exposingthe carrier 2810. The thermal conductive layer 2820 is disposed in therecess 2862 and has a recess 2822. The thermal conductive layer 2820 maycomprise a thermal-conductive material layer. The LED chip 2830 isdisposed in the recess 2822 wherein a ratio between a minimum width W1of the recess 2822 and a second width W2 of the LED chip 2830 beinglarger than 1 and smaller than or equal to 1.5. An inside wall 2824 ofthe recess 2822 includes a tilt wall 2824 a, a vertical wall 2824 b anda horizontal wall 2824 c wherein the vertical wall 2824 b connects thetilt wall 2824 a to the horizontal wall 2824 c on which the LED chip2830 is disposed. The adhesion layer 2840 is disposed in the opening2864 a and between the thermal conductive layer 2820 and the carrier2810. The film 2850 is disposed on the inside wall 2824 and contactedwith the LED chip 2830 and the thermal conductive layer 2820. The film2850 is single or multi-layered and is an adhesive layer, a mirrorlayer, a barrier layer or a seed layer. It should be notice that thetilt wall 2824 a benefits the film 2850 to reflect the light emittedfrom the LED chip 2830 so as to improve the luminescence efficiency ofthe light emitting diode package structure 2800.

FIGS. 31A˜31G are schematic cross-sectional views depicting a processflow for fabricating a light emitting diode chip structure according toone embodiment. FIG. 32 is schematic cross-sectional views depicting alight emitting diode chip structure according to an embodiment. FIGS.33A˜33B are schematic cross-sectional views depicting a process flow forfabricating a light emitting diode chip structure according to anotherembodiment.

Referring to FIG. 31A, a substrate 3110 with a plurality of recesses3112 is provided. Then, referring to FIG. 31B, a releasable film 3120 isformed on the substrate 3110 and covers the inside wall 3112 a of therecesses 3122. Next, referring to FIG. 31C, a plurality of LED chips3130 are disposed in the recesses 3112 respectively. Thereafter,referring to FIG. 31D, a film 3140 is formed on the LED chips 3130 andthe releasable film 3120. The film 3140 is single or multi-layered andis an adhesive layer, a mirror layer, a barrier layer or a seed layer.Then, referring to FIG. 32, the substrate 3110 and the releasable film3120 are removed.

In addition, referring to FIG. 33A, a releasable material 3310 isdisposed in the recesses 3112 before the step of FIG. 31C. Thereleasable material 3310 is photoresist, for example. Then, referring toFIG. 33B, the LED chips 3130 are disposed on the releasable material3310. Thereafter, referring to FIG. 32, the substrate 3110, thereleasable film 3120 and the releasable material 3310 are removed.

Besides, after the step of FIG. 31D, referring to FIG. 31E, a thermalconductive layer 3150 is formed on the film 3140. Then, referring toFIG. 31F, the substrate 3110 and the releasable film 3120 are removed.Thereafter, referring to FIG. 31G, the thermal conductive layer 3150 andthe film 3140 between the LED chips 3130 are sliced so as to form aplurality of LED chip structures 3160. Each of the LED chip structures3160 has a LED chip 3130, a portion of the film 3140 and a portion ofthe thermal conductive layer 3150.

To sum up, the light emitting diode package structure of the presentinvention has at least the following advantages:

1. The light emitting diode package structure of the present inventioncomprises the first protrusion formed by a thermal conductive material,and the first protrusion is attached to the sidewall of the LED chip.Hence, the first protrusion of the present invention is adapted forenhancing thermal conduction efficiency of the sidewall of the LED chip.Consequently, the first protrusion helps the light emitting diodepackage structure to prevent reducing light emitting efficiency ordamaging the LED chip.

2. Compared with a conventional carrier, the first protrusion of thepresent invention is closer to the light emitting layer of the LED chip.Therefore, the first protrusion helps to rapidly remove the heatgenerated by the light emitting layer of the LED chip.

3. The first protrusion and the carrier of the present invention areformed in one piece and formed by the same material. As a consequence,the heat generated by the LED chip is rapidly transferred to the carrierthrough the first protrusion, so as to achieve better heat dissipationof the light emitting diode package structure.

4. The adhesion layer of the present invention not only bonds the LEDchip to the carrier but also bonds the LED chip to the first protrusion.Consequently, the LED chip and the first protrusion are steadily bonded.In addition, the heat generated by the LED chip is transferred to thefirst protrusion and the carrier through the adhesion layer.

5. The second fluorescent material layer of the present invention has auniform thickness, and therefore a light emitted by the light emittingdiode package structure has uniform color.

6. The first protrusion of the present invention has an extendingportion contacting the bottom of the LED chip so as to enhance thermalconduction efficiency of the bottom of the LED chip besides enhancingthermal conduction efficiency of the sidewall of the LED chip.

Although the present invention has been disclosed by the abovepreferable embodiments, they are not intended to limit the presentinvention. Persons skilled in this art may make some modificationswithout departing from the spirit and scope of the present invention.Therefore, the protection range of the present invention falls in theappended claims.

1. A light emitting diode (LED) package structure, comprising: acarrier; a first protrusion disposed on the carrier and having a firstopening to expose the carrier; a LED chip disposed in the first openingon the carrier, and a ratio between a width of the first opening and awidth of the LED chip being 1 approximately; and an adhesion layerdisposed between the LED chip and the carrier to bond the LED chip tothe carrier.
 2. The LED package structure as claimed in claim 1, whereinthe first protrusion comprises a thermal-conductive material layer. 3.The LED package structure as claimed in claim 2, wherein a material ofthe thermal-conductive material layer comprises gold, silver, copper,indium, titanium, zinc, aluminum, lead, tin, nickel, platinum, chromium,or a combination of alloys thereof.
 4. The LED package structure asclaimed in claim 1, wherein the first protrusion comprises a stack of aplurality of thermal-conductive material layers.
 5. The LED packagestructure as claimed in claim 4, wherein a material of thethermal-conductive material layers comprise gold, silver, copper,indium, titanium, zinc, aluminum, lead, tin, nickel, platinum, chromium,or a combination of alloys thereof.
 6. The LED package structure asclaimed in claim 1, further comprising a reflective layer disposed onthe first protrusion, and the first protrusion comprising a firstthermal-conductive material layer and a second thermal-conductivematerial layer disposed between the first thermal-conductive materiallayer and the reflective layer, wherein the first thermal-conductivematerial layer is disposed on the carrier.
 7. The LED package structureas claimed in claim 6, wherein a material of the firstthermal-conductive material layer is copper, a material of the secondthermal-conductive material layer is nickel, and a material of thereflective layer is silver.
 8. The LED package structure as claimed inclaim 1, wherein a projection area of the adhesive layer to the carrieris smaller than a projection area of the LED chip to the carrier andthere is a gap between the LED chip and the carrier and the firstprotrusion has an extending portion filled the gap.
 9. The LED packagestructure as claimed in claim 8, wherein the carrier comprises a mainbody and a pedestal protruding from the main body and the LED chip isdisposed on the pedestal and the width of the pedestal is smaller thanthe width of LED chip and the adhesive layer is disposed between thepedestal and the LED chip.
 10. The LED package structure as claimed inclaim 9, wherein the pedestal has a first end connecting the main bodyand a second end extending toward the LED chip and the width of thepedestal is gradually decreased along a direction from the first end tothe second end.
 11. The LED package structure as claimed in claim 8,wherein the substrate has a center portion and a periphery portionaround the center portion and the material of the center portionincludes copper and the materials of the periphery portion includeinsulating material or plastic material.
 12. The LED package structureas claimed in claim 8, wherein the first thermal-conductive materiallayer is thinner than the LED chip.
 13. The LED package structure asclaimed in claim 1, further comprising a plurality of first adhesionlayers disposed between the LED chip and the carrier respectively. 14.The LED package structure as claimed in claim 13, wherein the firstadhesion layers are disposed at four corners of the LED chiprespectively.
 15. The LED package structure as claimed in claim 1,further comprising a fluorescent material layer disposed in the firstopening.
 16. The LED package structure as claimed in claim 1, whereinthe LED chip has a surface facing away from the carrier and the surfacehas a trench passing through a light emitting layer of the LED chip. 17.The LED package structure as claimed in claim 16, wherein the trenchlocated on the edge of the LED chip.
 18. The LED package structure asclaimed in claim 1, further comprising a film disposed on the LED chipand between the LED chip and the adhesive layer.
 19. The LED packagestructure as claimed in claim 18, wherein the film is single ormulti-layered and the film is an adhesive layer, a mirror layer, abarrier layer or a seed layer.
 20. A light emitting diode (LED) packagestructure, comprising: a carrier; a first protrusion disposed on thecarrier and having a first opening to expose the carrier; a LED chipdisposed in the first opening on the carrier, and a ratio between awidth of the first opening and a width of the LED chip being larger than1 and smaller than or equal to 1.5 such that a gap existing between asidewall of the LED chip and an inner sidewall of the first opening; andan adhesion layer disposed between the LED chip and the carrier to bondthe LED chip to the carrier.
 21. The LED package structure as claimed inclaim 20, wherein the first protrusion and the carrier are formed in onepiece, and the first protrusion and the carrier are formed by the samematerial.
 22. The LED package structure as claimed in claim 20, whereina portion of the adhesion layer is disposed in the gap.
 23. The LEDpackage structure as claimed in claim 20, further comprising a firstoptical material layer, and the first optical material layer beingdisposed on the inner sidewall of the first opening and the carrierexposed by the first opening.
 24. The LED package structure as claimedin claim 23, wherein the first optical material layer is a reflectivelayer or a light absorption layer.
 25. The LED package structure asclaimed in claim 20, further comprising a first fluorescent materiallayer disposed in the first opening.
 26. The LED package structure asclaimed in claim 20, further comprising a transparent material layerdisposed in the first opening.
 27. The LED package structure as claimedin claim 20, further comprising a second protrusion disposed on thefirst protrusion and having a second opening, and the second openingbeing connected with the first opening and having a width larger than awidth of the first opening.
 28. The LED package structure as claimed inclaim 27, wherein the carrier, the first protrusion, and the secondprotrusion are formed in one piece and formed by the same material. 29.The LED package structure as claimed in claim 27, further comprising asecond fluorescent material layer disposed in the second opening. 30.The LED package structure as claimed in claim 27, further comprising asecond optical material layer disposed on an inner sidewall of thesecond opening.
 31. The LED package structure as claimed in claim 30,wherein the second optical material layer is a reflective layer or alight absorption layer.
 32. The LED package structure as claimed inclaim 20, further comprising a film disposed on the LED chip and betweenthe LED chip and the adhesive layer.
 33. The LED package structure asclaimed in claim 32, wherein the film is single or multi-layered and thefilm is an adhesive layer, a mirror layer, a barrier layer or a seedlayer.
 34. The LED package structure as claimed in claim 32, wherein aninside wall of the first opening includes a vertical wall, a tilt walland a horizontal wall wherein the tilt wall connects the vertical wallto the horizontal wall on which the LED chip is disposed.
 35. A methodfor fabricating a light emitting diode (LED) package structure,comprising: providing a substrate having a first surface; disposing anadhesion layer and a LED chip on the first surface of the substrate,wherein the adhesion layer is bonded between the LED chip and thesubstrate, and the LED chip comprises a second surface away from thesubstrate; and forming a first thermal-conductive material layer on thefirst surface, wherein the first thermal-conductive material layercomprises a first opening to expose the LED chip, and an inner sidewallof the first opening is attached to a sidewall of the LED chip.
 36. Themethod as claimed in claim 35, further comprising forming a shieldinglayer on the second surface and a portion of the sidewall of the LEDchip before forming the first thermal-conductive material layer, andremoving the shielding layer after forming the first thermal-conductivematerial layer.
 37. The method as claimed in claim 36, furthercomprising forming a recess in the first thermal-conductive materiallayer after removing the shielding layer, and forming a fluorescentmaterial layer in the recess.
 38. The method as claimed in claim 36,wherein the second surface has a trench passing through a light emittinglayer of the LED chip and the shielding layer is filled in the trench.39. The method as claimed in claim 38, wherein the trench is located onthe edge of the LED chip.
 40. The method as claimed in claim 38, furthercomprising: forming a film on the sidewall of the LED chip wherein thefilm is single or multi-layered and is an adhesive layer, a mirrorlayer, a barrier layer or a seed layer before disposing the adhesionlayer and the LED chip on the first surface of the substrate.
 41. Themethod as claimed in claim 35, wherein a method for forming the firstthermal-conductive material layer comprises electroless plating,electroplating, electrophoresis, electrodeposition, or a combination ofthe above.
 42. The method as claimed in claim 35, wherein a method forforming the first thermal-conductive material layer further comprisesproviding a bonding layer and a thermal conductive element on the firstsurface of the substrate, and the bonding layer is bonded between thesubstrate and the thermal conductive element.
 43. The method as claimedin claim 35, further comprising performing a surface treatment processon the first surface of the substrate before disposing the adhesionlayer and the LED chip on the first surface of the substrate.
 44. Themethod as claimed in claim 35, wherein a projection area of the adhesivelayer to the substrate is smaller than a projection area of the LED chipto the substrate and there is a gap between the LED chip and thesubstrate and the first thermal-conductive material layer fills the gapduring forming the first thermal-conductive material layer.
 45. Themethod as claimed in claim 44 wherein the first thermal-conductivematerial layer covers the sidewall of the LED chip entirely or partiallyduring forming the first thermal-conductive material layer.
 46. Themethod as claimed in claim 35, further comprising forming a secondthermal-conductive material layer on the first thermal-conductivematerial layer after forming the first thermal-conductive materiallayer.
 47. The method as claimed in claim 46, further comprising forminga reflective layer on the second thermal-conductive material layer afterforming the second thermal-conductive material layer.
 48. A method forfabricating a light emitting diode (LED) package structure, comprising:providing a substrate having a recess; and disposing an adhesion layerand a LED chip on a bottom of the recess, wherein the adhesion layer isbonded between the substrate and the LED chip, and a ratio between awidth of the recess and a width of the LED chip is larger than 1 andsmaller than or equal to 1.5 such that a gap existing between a sidewallof the LED chip and an inner sidewall of the recess.
 49. The method asclaimed in claim 48, further comprising forming an optical materiallayer on the inner wall of the recess before disposing the adhesionlayer and the LED chip on the bottom of the recess.
 50. The method asclaimed in claim 49, wherein the optical material layer is a reflectivelayer or a light absorption layer.
 51. The method as claimed in claim48, further comprising forming a fluorescent material layer in therecess.
 52. A method for fabricating a light emitting diode (LED)package structure, comprising: providing a temporary substrate and anadhesive layer disposed thereon wherein a material of the adhesive layeris a removable material; disposing a plurality of LED chips on thetemporary substrate wherein the LED chips are partially embedded in theadhesive layer respectively; forming a film on the adhesive layerwherein the film covers the LED chips fully; singulating the temporarysubstrate and the adhesive layer into a plurality of LED chip units andeach LED chip unit has a LED chip, a first film, a first adhesive layerand a first temporary substrate; disposing the LED chip unit on asubstrate reversely wherein the first film is between the LED chip andthe substrate and an adhesive layer is disposed between the first filmand the substrate; forming a first protrusion formed by a thermalconductive material on the substrate wherein the first protrusion has afirst opening to expose the LED chip and a ratio between a width of thefirst opening and a width of the LED chip being larger than 1 andsmaller than or equal to 1.5; and removing the first adhesive layer andthe first temporary substrate so as to expose the LED chip.
 53. Themethod as claimed in claim 52, wherein the adhesive layer is single ormulti-layered.
 54. The method as claimed in claim 52, furthercomprising: forming a second adhesive layer exposing the LED chips onthe adhesive layer after the LED chips are disposed on the temporarysubstrate.
 55. The method as claimed in claim 52, wherein the first filmis single or multi-layered and the first film is an first adhesivelayer, a mirror layer, a barrier layer or a seed layer.
 56. A lightemitting diode (LED) package structure, comprising: a carrier having arecess; a LED chip disposed in the recess; a thermal conductive layerdisposed on the carrier and in the recess wherein the portion of thethermal conductive layer in the recess is between the LED chip and thecarrier and the thermal conductive layer has an opening and the LED chipis disposed therein and a ratio between a first width of the opening anda second width of the LED chip being larger than 1 and smaller than orequal to 1.5; a film disposed on a sidewall and a bottom of the LEDchip; and an adhesive layer disposed between the LED chip and thecarrier.
 57. The light emitting diode package structure as claimed inclaim 56, wherein the film is single or multi-layered and the film is anfirst adhesive layer, a mirror layer, a barrier layer or a seed layer.58. A light emitting diode (LED) package structure, comprising: acarrier; a pedestal disposed on the carrier and having a first recesswherein a bottom of the first recess has an opening exposing thecarrier; a thermal conductive layer disposed in the first recess and hasa second recess having an inside wall including a tilt wall, a verticalwall and a horizontal wall wherein the vertical wall connects the tiltwall to the horizontal wall; a LED chip disposed in the second recessand on the horizontal wall wherein a ratio between a minimum width ofthe second recess and a second width of the LED chip being larger than 1and smaller than or equal to 1.5; a film disposed on the inside wall;and an adhesive layer disposed in the opening and between the thermalconductive layer and the carrier.
 59. The light emitting diode packagestructure as claimed in claim 58, wherein the film is single ormulti-layered and the film is a first adhesive layer, a mirror layer, abarrier layer or a seed layer.
 60. A method for fabricating a lightemitting diode (LED) chip structure, comprising: providing a substratewith a plurality of recesses; forming a releasable film on the substrateand the releasable film covering the inside wall of the recesses;disposing a plurality of LED chips in the recesses respectively; forminga film on the LED chips and the releasable film wherein the film issingle or multi-layered and is an adhesive layer, a mirror layer, abarrier layer or a seed layer; and removing the substrate and thereleasable film.
 61. The method as claimed in claim 60, furthercomprising: disposing a releasable material in the recesses beforedisposing the LED chips in the recesses; and removing the releasablematerial when removing the substrate and the releasable film.
 62. Themethod as claimed in claim 61, wherein the releasable material isphotoresist.
 63. The method as claimed in claim 60, further comprising:forming a thermal conductive layer on the film before removing thesubstrate and the releasable film; and slicing the thermal conductivelayer and the film between the LED chips.